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Toshiba Semiconductor and Storage RN1314(TE85L,F) Toshiba Semiconductor and Storage RN1314(TE85L,F)

RN1314(TE85L,F)

Product Number:

RN1314(TE85L,F)

Description:

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SC-70

Description:

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SC-70


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Toshiba Semiconductor and Storage RN1314(TE85L,F) information

Specifications
ACL Staticide Inc Toshiba Semiconductor and Storage RN1314(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to ACL Staticide Inc Toshiba Semiconductor and Storage RN1314(TE85L,F)
  • Type
    Parameter
  • Mfr
    Toshiba Semiconductor and Storage
  • Series
    -
  • Package
    Tape & Reel (TR)
  • Product Status
    Active
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    1 kOhms
  • Resistor - Emitter Base (R2)
    10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    250 MHz
  • Power - Max
    100 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Supplier Device Package
    SC-70
  • Base Product Number
    RN1314
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN
    EAR99
  • HTSUS
    8541.21.0075
  • Standard Package
    3,000
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