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STD826T4
STD826T4 STD826T4

761-STD826T4

Manufacturer:

STMicroelectronics

Product Number:

761-STD826T4

Description:

STD826T4 Overview


This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum leve

Datasheet:

STD826T4

Description:

STD826T4 Overview


This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

STD826T4 Features


the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

STD826T4 Applications


There are a lot of STMicroelectronics STD826T4 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver


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STD826T4 information

Specifications
ACL Staticide Inc STD826T4 technical specifications, attributes, parameters and parts with similar specifications to ACL Staticide Inc STD826T4
  • Type
    Parameter
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA 2V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    1.1V @ 150mA, 3A
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    100MHz
  • Max Breakdown Voltage
    30V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • Saturation Current
    3A
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Cut Tape (CT)
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    15W
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD826
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    15W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    30V
STD826T4 Relevant information

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