FQP34N20

Introducing the FQP34N20, a high-performance N-Channel MOSFET that offers exceptional power handling capabilities for a wide range of applications. With a drain-source voltage rating of 200V and a continuous drain current of 34A, this power transistor is the ideal choice for demanding electronic circuits. The FQP34N20 is designed to deliver optimal performance and reliability, thanks to its low on-resistance of 0.057Ω and high switching speeds. This makes it particularly suitable for high-power applications such as power supplies, motor control, and high-frequency inverters. Equipped with a TO-220 package, the FQP34N20 is easy to mount and provides excellent thermal performance for improved efficiency. Its robust construction ensures not only high power handling capabilities but also long-term durability, making it a reliable choice for demanding environments. Furthermore, the FQP34N20 features enhanced gate oxide technology, offering improved gate charge and gate resistance characteristics. This results in better gate control and minimized power losses, ultimately leading to increased overall efficiency. Count on the FQP34N20 MOSFET for exceptional performance, reliability, and power handling capabilities in your next electronic design.