DS1746W-120IND+

The DS1746W-120IND+ is an advanced nonvolatile SRAM (nvSRAM) integrated circuit designed to provide high-performance data retention and easy data access even in the event of power loss or system failure. It combines the benefits of both static random access memory (SRAM) and nonvolatile memory technologies, making it ideal for demanding applications that require reliable, high-speed, and nonvolatile data storage. With a capacity of 32,768 words and a wide operating voltage range of 2.7V to 5.5V, the DS1746W-120IND+ offers ample storage space for critical data, ensuring quick and seamless system operation. It features an industry-standard, 28-pin JEDEC-compatible package and an easy-to-use address and data interface for smooth integration into existing designs. The DS1746W-120IND+ also incorporates a highly efficient integrated circuit design, allowing for low power consumption and extending battery life in portable and battery-powered devices. Furthermore, its nonvolatile nature eliminates the need for complex battery backup circuits, reducing component count, and increasing system reliability. With its exceptional reliability, performance, and easy integration, the DS1746W-120IND+ is the go-to solution for embedded systems, industrial applications, telecommunications, and military applications that require high-speed data retention even in the face of power interruptions or system failures.