DS1225AB-200IND+

Introducing the DS1225AB-200IND+, an advanced non-volatile SRAM (NVSRAM) solution that combines the high speed and ease of use of standard SRAM with the non-volatility of EEPROM. The DS1225AB-200IND+ features a high-performance CMOS technology that provides access times as fast as 200 ns. It offers a non-volatile read-write capability, which means that data stored in the memory will be retained even in the event of a power loss. This eliminates the need for battery backup or a separate EEPROM device, saving valuable system cost and complexity. With a capacity of 64 kilobits, the DS1225AB-200IND+ is an ideal choice for critical applications that require reliable and instantaneous data storage. It operates over a wide voltage range of 4.5V to 5.5V and is offered in a space-saving 28-pin DIP package. Designed for ease of integration, the DS1225AB-200IND+ is compatible with most TTL and CMOS logic families. It also offers unlimited read and write cycles, making it suitable for use in high-performance systems that require frequent data updates. Experience the convenience and reliability of non-volatile SRAM with the DS1225AB-200IND+. Upgrade your system today for enhanced data storage and protection.