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TPD4E001DRLR Texas Instruments See Relate Datesheet
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TPD4E001DBVR Texas Instruments See Relate Datesheet
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TPD4E001QDBVRQ1 Texas Instruments See Relate Datesheet
113
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TPD4E002DRLR Texas Instruments See Relate Datesheet
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TPD4E05U06QDQARQ1 Texas Instruments <p><strong>TPD4E05U06QDQARQ1&nbsp;Description</strong></p><p><strong><br/></strong></p><p>The TPDxE05U06-Q1 is a family of unidirectional</p><p>Transient Voltage Suppressor (TVS) Electrostatic</p><p>Discharge (ESD) protection diodes with ultra-low</p><p>capacitance. They are rated to dissipate ESD strikes</p><p>above the maximum level specified in the IEC 61000-</p><p>4-2 level 4 international standard. The ultra-low</p><p>loading capacitance makes these devices ideal for</p><p>protecting any high-speed signal applications up to 6</p><p>Gbps.</p><p><br/></p><p><strong>TPD4E05U06QDQARQ1&nbsp; Features</strong></p><p><strong><br/></strong></p><p>1• AEC-Q101 Qualified</p><p>– Device HBM Classification Level H3B</p><p>– Device CDM Classification Level C5</p><p>– Device Temperature Range: –40°C to +125°C</p><p>• IEC 61000-4-2 Level 4 ESD Protection</p><p>(See the ESD Ratings—IEC Specification Table)</p><p>– ±12-kV Contact Discharge</p><p>– ±15-kV Air Gap Discharge</p><p>• IEC 61000-4-4 EFT Protection</p><p>– 80 A (5/50 ns)</p><p>• IEC 61000-4-5 Surge Protection</p><p>– 2.5 A (8/20 µs)</p><p>• I/O Capacitance 0.42 pF to 0.5 pF (Typical)</p><p>• DC Breakdown Voltage 6.4 V (Minimum)</p><p>• Ultra Low Leakage Current 10 nA (Maximum)</p><p>• Low ESD Clamping Voltage (14 V at 5-A TLP)</p><p>• Easy Flow-Through Routing Packages</p><p><br/></p><p><strong>TPD4E05U06QDQARQ1&nbsp; Applications</strong></p><p><strong><br/></strong></p><p>• End Equipment</p><p>– Head Unit</p><p>– Rear Seat Entertainment</p><p>– Telematics</p><p>– USB Hub</p><p>– Navigation Module</p><p>– Media Interface</p><p><br/></p>
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TPD4S009DRYR Texas Instruments See Relate Datesheet
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TPD2E001DRLR Texas Instruments The TPD2E001 is a two-channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode array. The TPD2E001 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 Level 4 international standard. The DRS package (3.00 mm x 3.00 mm) is also available as a non-magnetic package for medical imaging applications. See also TPD2E2U06DRLR which is p2p compatible to TPD2E001DRLR and offers higher IEC ESD Protection, lower clamping voltage, and eliminates the input capacitor requirement.
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 IP4282CZ6 NXP Semiconductors <span style="color: rgb(51, 51, 51); font-family: Roboto, Helvetica, Tahoma, sans-serif; font-size: 12px; background-color: rgb(255, 255, 255);">IP4282CZ6 datasheet pdf and Unclassified product details from NEXPERIA stock available at Feilidi</span>
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1.5KE400A-E3/4 Vishay See Relate Datesheet
999
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1.5KE150CAHE3/54 Vishay See Relate Datesheet
999
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1.5KE36CA/1 Vishay See Relate Datesheet
999
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1.5KE170AHE3/54 Vishay See Relate Datesheet
999
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1.5KE10CAHE3/54 Vishay See Relate Datesheet
999
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1.5KE62CAHE3/54 Vishay See Relate Datesheet
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P6KE200CA-E3/51 Vishay See Relate Datesheet
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P6KE9.1CA-E3/4 Vishay See Relate Datesheet
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P6KE18A/1 Vishay See Relate Datesheet
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P6KE24A-E3/4 Vishay See Relate Datesheet
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SA20CA-E3/51 Vishay See Relate Datesheet
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SA30A-E3/51 Vishay See Relate Datesheet
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SMBJ33CA/2 Vishay See Relate Datesheet
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SMBJ130CA-E3/2C Vishay See Relate Datesheet
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SMBJ17CA/2 Vishay See Relate Datesheet
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SMBJ6.5CA/2 Vishay See Relate Datesheet
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MSMLJ48CA Microchip Technology See Relate Datesheet
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MASMCG85AE3 Microchip Technology See Relate Datesheet
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MASMCG40A Microchip Technology See Relate Datesheet
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MASMBJ160A Microchip Technology See Relate Datesheet
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MP6KE75CAE3 Microchip Technology See Relate Datesheet
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MASMCGLCE28A Microchip Technology See Relate Datesheet
999
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